to-92 plastic-encapsulate transistors a92 transistor (pnp) features high voltage maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage - 310 v v ceo collector-emitter voltage - 305 v v ebo emitter-base voltage -5 v i c collector current -continuous - 2 00 ma p c collector power dissipation 625 mw t j junction temperature 150 t stg storage temperature -55-150 r ? ja thermal resistance, j unction to ambient 200 /mw r ? jc thermal resistance, j unction to case 83.3 /mw electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max unit collector-base breakdown voltage v (br)cbo i c =-100ua, i e =0 - 310 v collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 - 305 v emitter-base breakdown voltage v (br)ebo i e =-100 a, i c =0 -5 v collector cut-off current i cbo v cb = -200 v i e =0 -0.25 a emitter cut-off current i ebo v eb = -5 v, i c =0 -0.1 a h fe(1) v ce = -10 v, ic=- 1 ma 60 h fe(2) v ce = -10v, i c = -10 ma 80 250 dc current gain h fe(3) v ce = -10 v, i c = -80 ma 60 collector-emitter saturation voltage v ce (sat) i c = -20 ma, ib= -2 ma -0.2 v base-emitter saturation voltage v be (sat) i c = -20 ma, ib= -2 ma -0.9 v transition frequency f t v ce = -20 v, ic= -10 ma f = 30mhz 50 mhz classification of h fe(2) rank a b 1 b 2 c range 80-100 100-150 150-200 200-250 to-92 1.emitter 2.base 3.collector i cm collector current - pulsed -500 ma 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,feb,2012
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